? 201 1 fairchild semiconductor corporation FDQ7236AS rev c FDQ7236AS dual notebook power supply n - channel powertrench ? in so-14 package general description the FDQ7236AS is designed to replace two single so- 8 mosfets in dc to dc power supplies. the high-side switch (q1) is designed with specific emphasis on reducing switching losses while the low-side switch (q2) is optimized to re duce conduction losses using fairchild?s syncfet tm technology. the FDQ7236AS includes a patented combination of a mosfet monolithically integrated with a schottky diode. features ? q2 : 14 a, 30v. r ds(on) = 8.7 m ? @ v gs = 10v r ds(on) = 10.5 m ? @ v gs = 4.5v ? q1 : 11 a, 30v. r ds(on) = 13.2 m ? @ v gs = 10v r ds(on) = 16 m ? @ v gs = 4.5v so-14 g1 g2 vin s2 s2 s2 absolute maximum ratings t a = 25c unless otherwise noted symbol parameter q2 q1 units v dss drain-source voltage 30 30 v v gss gate-source voltage 20 20 v 14 11 i d drain current - continuous (note 1a) - pulsed 50 50 a 2.4 1.8 p d power dissipation for single operation (note 1a & 1b) (note 1c & 1d) 1.3 1.1 w t j , t stg operating and storage junction temperature range ? 55 to +150 c thermal characteristics thermal resistance, junction-to-ambient (note 1a & 1b) 52 68 r ja (note 1c & 1d) 94 118 c/w package marking and ordering information device marking device reel size tape width quantity FDQ7236AS FDQ7236AS 13? 16mm 2500 units FDQ7236AS pin 1 january 2011
FDQ7236AS rev c electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 1 ma v gs = 0 v, i d = 250 a q2 q1 30 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c i d = 250 a, referenced to 25 c q2 q1 25 24 mv/ c v ds = 24 v, v gs = 0 v q2 q1 500 1 a i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v, t j = 125 c q2 q1 5.6 40 ma a i gss gate-body leakage v gs = 20 v, v ds = 0 v all 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma v ds = v gs , i d = 250 a q2 q1 1 1 1.8 1.7 3 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c i d = 250 a, referenced to 25 c q2 q1 ? 3 ? 4 mv/ c v gs = 10 v, i d = 14 a v gs = 4.5 v, i d = 13 a v gs = 10 v, i d = 14a, t j = 125 c q2 7.2 8.7 10 8.7 10.5 12.5 r ds(on) static drain-source on-resistance v gs = 10 v, i d = 11 a v gs = 4.5 v, i d = 10 a v gs = 10 v, i d = 11, t j = 125 c q1 11 13 15 13.2 16 19 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v v gs = 10 v, v ds = 5 v q2 q1 50 50 a g fs forward transconductance v ds = 10 v, i d = 14 a v ds = 10 v, i d = 11 a q2 q1 58 43 s dynamic characteristics c iss input capacitance q2 q1 1530 920 pf c oss output capacitance q2 q1 440 190 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz q2 q1 160 120 pf r g gate resistance v gs = 15mv, f = 1.0 mhz q2 q1 1.9 1.9 ? fdq7236 a s
FDQ7236AS rev c electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units switching characteristics (note 2) t d(on) turn-on delay time q2 q1 12 9 21 18 ns t r turn-on rise time q2 q1 13 5 23 10 ns t d(off) turn-off delay time q2 q1 30 27 49 43 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10v, r gen = 6 ? q2 q1 19 4 35 8 ns t d(on) turn-on delay time q2 q1 17 11 30 20 ns t r turn-on rise time q2 q1 18 15 32 26 ns t d(off) turn-off delay time q2 q1 28 16 44 29 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 4.5v, r gen = 6 ? q2 q1 13 9 23 18 ns q g(tot) total gate charge, v gs = 10v q2 q1 28 17 39 24 nc q g(tot) total gate charge, v gs = 5v q2 q1 15 9 21 19 nc q gs gate-source charge q2 q1 4.1 2.7 nc q gd gate-drain charge q2 v ds = 15 v, i d = 14a q1 v ds = 15 v, i d = 11a q2 q1 4.9 3.3 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q2 q1 3.4 2.1 a v sd drain-source diode forward voltage v gs = 0 v, i s = 3.4 a (note 2) v gs = 0 v, i s = 1.9 a (note 2) v gs = 0 v, i s = 2.1 a (note 2) q2 q1 0.5 0.4 0.7 0.7 1.2 v t rr diode reverse recovery time 22 ns q rr diode reverse recovery charge i f = 14a di f /dt = 300 a/s q2 15 nc t rr diode reverse recovery time 16 ns q rr diode reverse recovery charge i f = 11a di f /dt = 100 a/s q1 5 nc note : 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3 4 a) 68c/w when mounted on a 1in 2 pad of 2 oz copper (q1). b) 52c/w when mounted on a 1in 2 pad of 2 oz copper (q2). c) 118c/w when mounted on a minimum pad of 2 oz copper (q1). d) 94c/w when mounted on a minimum pad of 2 oz copper (q2). fdq7236 a s
FDQ7236AS rev c typical characteristics: q2 0 10 20 30 40 50 0 0.5 1 1.5 2 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 4.0v 3.5v v gs = 10v 6.0v 2.5v 4.5v 0.6 1 1.4 1.8 2.2 2.6 0 1020304050 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 4.5v 10.0v 6.0v 3.5v 4.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 14a v gs =10v 0.004 0.008 0.012 0.016 0.02 0.024 246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 7a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 11.522.533.54 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdq7236 a s
FDQ7236AS rev c typical characteristics : q2 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 14a v ds = 10v 20v 15v 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 10v single pulse r ja = 94 o c/w t a = 25 o c 10ms 1ms 100s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 94c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 94c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1d. transient thermal response will change depending on the circuit board design fdq7236 a s
FDQ7236AS rev c typical characteristics : q2 syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characterist ics to a discrete external schottky diode in parallel with a mosfet. figure 12 shows the reverse recovery characteristic of the FDQ7236AS q2. figure 12. FDQ7236AS syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet(fds6670a). figure 13. non-syncfet (fds6670a) body diode reverse recovery characteristic. schottky barrier diodes exhi bit significant leakage at high temperature and high reverse voltage. this will increase the power dissipated in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 v ds , reverse voltage (v) i dss , reverse leakage current (a) t a = 25 o c t a = 100 o c t a = 125 o c figure 14. syncfet body diode reverse leakage versus drain-source voltage and temperature . fdq7236 a s time : 12ns/div current: 0.8a/div time : 12ns/div current: 0.4a/div
FDQ7236AS rev c typical characteristics: q1 0 10 20 30 40 50 00.511.522.5 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 4.0v 3.5v v gs = 10v 6.0v 2.5v 4.5v 0.6 1 1.4 1.8 2.2 2.6 0 1020304050 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.0v 4.5v 10.0v 6.0v 3.5v 4.0v figure 15. on-region characteristics. fi gure 16. on-resistance variation with drain current and gate voltage. 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 11a v gs = 10v 0.008 0.012 0.016 0.02 0.024 0.028 0.032 0.036 24681 0 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 5.5a t a = 125 o c t a = 25 o c figure 17. on-resistance variation with temperature. figure 18. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 11.522.533.54 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 19. transfer characteristics. figure 20. body diode forward voltage variation with source current and temperature. fdq7236 a s
FDQ7236AS rev c typical characteristics: q1 0 2 4 6 8 10 0 4 8 1 21 62 0 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 11a v ds = 10v 20v 15v 0 300 600 900 1200 1500 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 21. gate charge characteristics. figure 22. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 10v single pulse r ja = 118 o c/w t a = 25 o c 10ms 1ms 100s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 118c/w t a = 25c figure 23. maximum safe operating ar ea. figure 24. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 118 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 25. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1c transient thermal response will change depending on the circuit board design. fdq7236 a s
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